Work

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Year: 2024

Type: article

Abstract: In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (Vth) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in Vth and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-rxfx7f

Authors: Jae Hwa Seo, Young Jun Yoon, Young Jo Kim, Hyoung Woo Kim

Institutions: Korea Electrotechnology Research Institute, Gyeongkuk National University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Korea Electrotechnology Research Institute, Korea Atomic Energy Research Institute, Ministry of Science and ICT, South Korea

OpenAlex ID: W4401890455