Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Year: 2024
Type: article
Abstract: Threshold voltage instability remains a challenging aspect for metal-oxide semiconductor-field-effect-transistors (MOSFETs) made from silicon carbide (SiC). SiC MOSFETs from two manufacturers, with planar and trench gate structure respectively, have been tested under different test procedures, including power cycling and high temperature gate bias tests. The standard power cycling test setup has been modified to enable an in situ threshold voltage read-out procedure with the hysteresis method. The recorded threshold voltage drift has been compared with results from high temperature gate bias tests applying a simple power law fit, with the intention to predict the drift in power cycling tests. For the group with trench MOSFETs comparable results between power cycling and gate stress tests have been achieved.
DOI: 10.4028/p-s5n0pk
Institution: Chemnitz University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401893285