Year: 2024
Type: article
Abstract: Silicon Carbide (SiC) enhancement mode MOS electronics offer several benefits for realizing analog, digital and mixed signal electronics, but limitations on gate dielectric reliability has limited the adoption of MOS in high temperature application. In this work, we report GE’s lateral SiC MOSFETs exceeding previously reported temperature capabilities for SiC MOSFETs with experimental results that have shown that >500°C operation of SiC MOSFETS is possible with >400 hours demonstrated at 620°C, and short-term functionality demonstrated to 800°C. The result shows that MOS-based SiC electronics can continue to be a viable choice for circuit implementations at extreme temperatures >600°C.
DOI: 10.4028/p-npiby5
Authors: Emad Andarawis, David Shaddock, Tammy Johnson, Shubhodeep Goswami, Reza Ghandi
Institution: GE Global Research (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401893907