Work

Polymorphic Ferroelectricity in Artificially Stacked MoS2 Interfaces

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01249

Authors: Yanggeun Joo, Eunji Hwang, Kenji Watanabe, Takashi Taniguchi, Heejun Yang

Institutions: Korea Advanced Institute of Science and Technology, National Institute for Materials Science

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Samsung Science and Technology Foundation

Awards: G3380037250, G714439588, G868149537

OpenAlex ID: W4402003616

FWCI: 0.473

Cites: 42

Cited by: 5

Related to: 10