Work

Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01130

Authors: Shalu Saini, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal, Shree Prakash Tiwari

Institution: Indian Institute of Technology Jodhpur

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Electronics and Information technology, Science and Engineering Research Board

Awards: G2838935279, G4852358007

OpenAlex ID: W4402031711

FWCI: 2.691

Cites: 49

Cited by: 26

Related to: 10