Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation
Year: 2024
Type: article
Authors: Kyul Ko, Dae-Hwan Ahn, Jai-Youn Jeong, Byeong-Kwon Ju, Jae-Hoon Han
Institutions: Korea Institute of Science and Technology, Korea University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G3227798424, G622998484, G921594505
OpenAlex ID: W4402040599