Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties
Year: 2024
Type: article
Abstract: We report growth and characterization of n-Si/p-SnOxheterojunction using RF sputtering for deposition of p-type SnOxunder controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnOxwere varied by controlling the growth oxygen pressure of SnOx. Several characterization techniques, including PL (photoluminescence), AFM (atomic force microscopy), FESEM (field emission scanning electron microscopy), XRD, I-V characteristics and Hall measurement, were conducted to analyze the structural, optical, and electrical properties of the n-Si/p-SnOx heterojunction. The knee voltage (Vknee), or cut-in voltage, was calculated by analyzing the gradient of the dark current-voltage (J-V) curves when the bias was applied in the forward direction. The Vkneevalues for type-I, type-II, and type-III n-Si/p-SnOxheterojunctions were determined to be 0.62 V, 0.84 V, and 1.0 V, respectively. The ideality factors (n1and n2) were determined to be 1.52, 2.22, 3.52, and 8.41, 9.31, 10.34, respectively, for various heterojunction types. The reverse saturation current densities, J01and J02ranging from approximately 10−7to 10−6A/cm2, and 10−5to 10−4A/cm2, respectively. The objective of this experimental work is to investigate especially, the prospect of silicon /metal-oxide (Si/SnOx) based heterojunction to be used as optical sensors with tunable optoelectronic properties of SnOx.
Source: IEEE photonics journal
Authors: Manoj Kumar, Vivek Kumar Srivastava, M. Sudhakara Reddy, Ram Bharos Yadav, Manoj Sharma, Amrindra Pal, Purnendu Shekhar Pandey, Yadvendra Singh, Gyanendra Kumar Singh, Balkeshwar Singh
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,995
OpenAlex ID: W4402040964