Work

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/5.0226672

Authors: Chi-Yuan Kuo, Wei-Chen Lin, Tsung-Tien Lo, Ching-Hsuan Shen, Ming-Yu Shen, Chia-Chan Lee, Chi-Ping Lin, Yuang-Ming Lin, Haw-Tyng Huang, Po-Chun Yeh, Hsin-Chu Chen, Chih-I Wu

Institutions: National Taiwan University, National Tsing Hua University, National Sun Yat-sen University, Industrial Technology Research Institute

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: Semiconductor Beol Process Compatibility:Development of High-Performance P-Type Laminated Cuox Tft and Integration into Cmos Inverter Verification, Assembled 2d Material Heterostructures: Interfacial Interaction, Surface Doping, and Electronic Structure Analysis, Towards Next-Generation Semiconductor Technology: Enhancing the Performance of Normally-Off Gan Hemt and Oxide Tft with Beol-Compatible P-Type Laminated Cuox Structure, G443691678, Core Facility Establishment Project for the Semiconductor Collage of National Sun Yat-Sen University( I ), G8296887506

OpenAlex ID: W4402047641

FWCI: 0.206

Cites: 21

Cited by: 2

Related to: 10