Dual-Tuned Terahertz Absorption Device Based on Vanadium Dioxide Phase Transition Properties
Year: 2024
Type: article
Abstract: In recent years, absorbers related to metamaterials have been heavily investigated. In particular, VO2 materials have received focused attention, and a large number of researchers have aimed at multilayer structures. This paper presents a new concept of a three-layer simple structure with VO2 as the base, silicon dioxide as the dielectric layer, and graphene as the top layer. When VO2 is in the insulated state, the absorber is in the closed state, Δf = 1.18 THz (absorption greater than 0.9); when VO2 is in the metallic state, the absorber is open, Δf = 4.4 THz (absorption greater than 0.9), with ultra-broadband absorption. As a result of the absorption mode conversion, a phenomenon occurs with this absorber, with total transmission and total reflection occurring at 2.4 THz (A = 99.45% or 0.29%) and 6.5 THz (A = 90% or 0.24%) for different modes. Due to this absorption property, the absorber is able to achieve full-transmission and full-absorption transitions at specific frequencies. The device has great potential for applications in terahertz absorption, terahertz switching, and terahertz modulation.
Source: Materials
DOI: 10.3390/ma17174287
Institutions: Southwest University of Science and Technology, Joint Laboratory for Extreme Conditions Matter Properties, State Key Laboratory of Environmental-friendly Energy Materials, Central South University, Jishou University, Yangtze University, Jinzhong University, Zhejiang University of Technology, Guilin University of Electronic Technology, Hubei Engineering University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
OpenAlex ID: W4402053630