Work

Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad7638

Authors: Xiaorui Wang, Tomáš Vaněk, František Hájek, Vítězslav Jarý, Tomáš Hubáček, Alice Hospodková, Francis Chi-Chung Ling, Shijie Xu

Institutions: University of Hong Kong, Czech Academy of Sciences, FZU - Institute of Physics of the Czech Academy of Sciences, Fudan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Grantová Agentura České Republiky

Awards: 高效GaInP/GaAs双结叠层太阳能电池中载流子产生、复合和输运等细致光物理过程的综合研究, G5776617153

OpenAlex ID: W4402120235

FWCI: 0.289

Cites: 55

Cited by: 2

Related to: 10