Work

Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad7637

Authors: Hongbo Li, Jian Zhang, Chongyong Guo, Yuanya Liu, Chunyan Liu, Yu Wang, Jianjun Li, Hui Yuan, Xingcheng Jin

Institution: China Resources (China)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402120644

FWCI: 0.104

Cites: 37

Cited by: 1

Related to: 10