Year: 2024
Type: article
Abstract: We present results of epitaxial characterization and benchmarking of Silicon Carbide (SiC) epitaxial layers grown on both 6-inch commercially available SiC substrate and on SOITEC’s new generation SmartSiCTM substrate. Multi wafer reactor was utilized to avoid run-to-run variation. Schottky Barrier Diodes (SBD) and electrical test vehicles were fabricated to extract ideality factor, barrier height and ohmic contact resistance for benchmarking.
Source: Materials science forum
DOI: 10.4028/p-vhvc04
Institution: Soitec (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4402122515