Work

Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization

Year: 2024

Type: article

Abstract: A review of the specific characterisation techniques developed and customized for SmartSiC™ substrates is given. A focus is made on thermal characterization of this engineered structure as well as its beneficial features with regards to bipolar degradation.

Source: Materials science forum

DOI: 10.4028/p-bf6cd7

Authors: Alexis Drouin, Roland B. Simon, Damien Radisson, Walter Schwarzenbach, Marcin Zielinski, Eric Guiot, Enrica Cela, Audrey Chapelle, Hugo Biard

Institutions: Soitec (France), NOVASiC (France)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4402122516

FWCI: 0.206

Cites: 14

Cited by: 2

Related to: 10