Year: 2024
Type: article
Abstract: SmartSiC™ products developed by Soitec in the past four years consist of a high quality monocrystalline silicon carbide (m-SiC) on the top of an ultra-low resistivity polycrystalline silicon carbide (p-SiC or poly-SiC), the interface being electrically conductive. These engineered substrates are intended to bring added value for vertical power devices compared to standard m-SiC, by leveraging the wide bandgap (WBG) properties of the m-SiC and the enhanced p-SiC properties of the base substrate. Thus, it is of paramount importance to understand and monitor the p-SiC properties. In this paper, we present its electrical resistivity, microstructure and texture measurements through SEM and EBSD, thermal conductivity through Laser Flash Anneal (LFA), and Young modulus measurements.
Source: Materials science forum
DOI: 10.4028/p-qdrkz7
Authors: Hugo Biard, Alexis Drouin, Walter Schwarzenbach, Kassem Alassaad, Laetitia Coeurdray, Valentine Chagneux, Mael Coche, Sebastien Ledrappier, Sylvain Monnoye, Hugues Mank, Séverin Rouchier, Thierry Barge, Damien Radisson, Alexandre Moulin, Sophie Barbet, Julie Widiez, Sidoine Odoul, Christophe Maleville
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4402122524