Work

Characterization of Very Thin 3C-SiC Epilayers on Si

Year: 2024

Type: article

Abstract: We verify experimentally to what extent the intensity of 3C-SiC TO peak in infrared reflectance spectrum can be used to estimate the thickness of extremely thin 3C-SiC epilayers on Si. The influence of several Si substrate characteristics (orientation, doping level, back-side surface preparation) on the peak calibration is discussed.

Source: Materials science forum

DOI: 10.4028/p-qq8six

Authors: Marcin Zielinski, Marc Bussel, Marc Portail, Adrien Michon, Yvon Cordier

Institutions: NOVASiC (France), Université Côte d'Azur, Communauté d'universités et d'établissements Université Côte d'Azur

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Horizon 2020 Framework Programme

Awards: G2675903750, G3177760083