A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
Year: 2024
Type: article
Abstract: Porosifying the surface of a single crystalline silicon carbide (4H-SiC) wafer with the means of metal assisted photo chemical etching (MAPCE) promotes the adhesion of an electroplated nickel (Ni) layer. By utilizing a mechanical peel-off process, a Ni layer with tailored mechanical stress is peeled off such that also a thin layer of 4H-SiC is teared apart from the wafer as well.
Source: Materials science forum
DOI: 10.4028/p-8aeonp
Institution: TU Wien
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4402122580