Work

Study on Electrostatic Discharge Stress Reliability of Thin-Film Transistors With Various Interface and Structure Types

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3442779

Authors: Zhengyu Chen, Meng Zhang, Yan Yan, Shuangmei Xue, Wenrui Lan, Siyuan He, Yuxiang Huang, Ye Zhou, Hoi-Sing Kwok

Institutions: Shenzhen University, Hong Kong University of Science and Technology

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G5686081823, G6587739651

OpenAlex ID: W4402124717

FWCI: 0.308

Cites: 45

Cited by: 3

Related to: 10