Work

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3449251

Authors: Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Hyun Chul Sagong, Jungsik Kim, Jeong-Soo Lee

Institutions: Pohang University of Science and Technology, Korea Automotive Technology Institute, Gyeongsang National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Samsung

OpenAlex ID: W4402124754

FWCI: 0.936

Cites: 30

Cited by: 9

Related to: 10