Work

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

Year: 2024

Type: article

Abstract: The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI 2 using a combination of first-principles calculations and the non-equilibrium Green’s function method. Multilayer graphene electrodes are employed to build a magnetic tunnel junction with bilayer LaI 2 as ferromagnetic barrier. The magnetic tunnel junction turns out to be a perfect spin filter device with an outstanding tunneling magnetoresistance ratio of 653% under a bias of 0.1 V and a still excellent performance in a wide bias range. In combination with the obtained high spin injection efficiency this opens up great potential from the application point of view.

Source: npj 2D Materials and Applications

DOI: 10.1038/s41699-024-00493-6

Authors: Shubham Tyagi, Avijeet Ray, Nirpendra Singh, Udo Schwingenschlögl

Institutions: King Abdullah University of Science and Technology, Khalifa University of Science and Technology

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,290

Funder: King Abdullah University of Science and Technology