Work

Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs

Year: 2024

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad75a2

Authors: Soyeon Kim, Jaewook Yoo, Seohyeon Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Minah Park, Choong-Ki Kim, TaeWan Kim, Bongjoong Kim, Hagyoul Bae

Institutions: Jeonbuk National University, Georgia Institute of Technology, University of Seoul, Hongik University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and ICT, South Korea

Award: G3378782034

OpenAlex ID: W4402135615

FWCI: 0.095

Cites: 37

Cited by: 1

Related to: 10