Work

Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Year: 2025

Type: article

Abstract: This paper presents for the first time a comparison between experimental measurements of Optical Beam Induced Current (OBIC) and finite element simulations on high-voltage bipolar diodes. Two peripheral protection structures were chosen: a simple MESA protection and a MESA + JTE combination. Comparable experimental and simulated results were obtained in both cases.

Source: Key engineering materials

DOI: 10.4028/p-0v5tye

Authors: Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Pierre Brosselard, Mihai Lazar, Sigo Scharnholz, Bertrand Vergne, Hervé Morel

Institutions: Lyon 1 Université, Institut National des Sciences Appliquées de Lyon, Université de Technologie de Troyes, Light, nanomaterials, nanotechnologies, Institut Franco-Allemand de Recherches de Saint-Louis

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Agence Nationale de la Recherche

Awards: High Voltage Photo-Switches, G4656594441

OpenAlex ID: W4402148235

FWCI:

Cites: 5

Cited by:

Related to: 10