Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology
Year: 2024
Type: article
Institutions: Chinese Academy of Sciences, University of Chinese Academy of Sciences, Institute of Microelectronics, Northwest Institute of Nuclear Technology, Xinjiang Technical Institute of Physics & Chemistry, Nanjing University of Posts and Telecommunications, Xidian University, Fudan University, State Key Laboratory of ASIC and System
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402171162