Interfacial passivation by using an amorphous hafnium oxide thin layer toward improved CH3NH3PbI3/Si heterojunction photodetectors
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0221884
Institution: Jiangsu University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G2626866614, G6629655283
OpenAlex ID: W4402192943
