Work

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Year: 2024

Type: article

Abstract: The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices were produced with varying proportions of relative areas and diameters, encompassing a spectrum from pure Schottky Barrier Diode (SBD) to pure Heterojunction Diode (HJD) configurations. The turn-on voltages with W contacts ranged from 0.22 V for pure Schottky rectifiers to 1.50 V for pure HJDs, compared to 0.66 and 1.77 V, respectively, for Ni/Au contacts. The reverse recovery times ranged from 31.2 to 33.5 ns for pure Schottky and heterojunction rectifiers. Switching energy losses for the SBD with W contacts were ∼20% of those for HJDs. The reverse breakdown voltages ranged from 600 V for SBDs to 2400 V for HJDs. These are the lowest reported turn-on voltage values for 600/1200 V-class Ga2O3 rectifiers that extend the range of applications of these devices down to the voltages of interest for electric vehicle charging applications.

Source: AIP Advances

DOI: 10.1063/5.0227210

Authors: Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

Institution: University of Florida

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $1,350