Work

Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

Year: 2024

Type: article

Abstract: This study delves into the impact of interruption times on the interfacial characteristics of strain-balanced InGaAs/InAlAs superlattice structures. The structures were grown epitaxially using molecular beam epitaxy technique and subsequently analyzed through atomic probe tomography. Based on our findings, interruption times significantly influence the characteristics of layers and interfaces, as well as the composition of layers. Notably, interruption times significantly influence the interface length in the InAlAs layers, with changes of up to 10% of its thickness. In contrast, the interface length in the InGaAs layers remains unaffected by variations in interruption time. These insights into the evolution of interface lengths, which are influenced by the growth modes of layers, adatom mobility, and interruption times, present a promising opportunity for enhancing epitaxial growth methods for quantum devices.

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2024.176297

Authors: Won Jun Lee, Juwon Seo, Jae Cheol Shin, Il Ki Han, Tae Geun Kim, JoonHyun Kang

Institutions: Korea Institute of Science and Technology, Hanyang University, Dongguk University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,550

Funders: Korea Institute of Science and Technology, National Research Foundation of Korea