Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications
Year: 2024
Type: article
Abstract: Complementary polarized spin-transfer torque magnetic random-access memory (CPSTT-MRAM) has been proposed to address the sensing reliability issues caused by the single-ended sensing of STT-MRAM. However, it results in a three-fold increase in the free layer (FL) area compared to STT-MRAM, leading to a higher write current. Moreover, the read and write current paths in this memory are the same, thus preventing the optimization of each operation. To address these, in this study, we proposed a complementary polarized spin-orbit torque MRAM (CPSOT-MRAM), which tackles these issues through the SOT mechanism. This CPSOT-MRAM retains the advantages of CPSTT-MRAM while significantly alleviating the high write current requirement issue. Furthermore, the separation of the read and write current paths enables the optimization of each operation. Compared to CPSTT-MRAM, the proposed CPSOT-MRAM achieves a 4.0× and 2.8× improvement in write and read power, respectively, and a 20% reduction in layout area.
Source: Electronics
Authors: Hyerim Kim, Kon-Woo Kwon, Yeongkyo Seo
Institutions: Inha University, Hongik University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,728
OpenAlex ID: W4402202840