Work

Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process

Year: 2024

Type: article

Abstract: This paper designs a bandpass filter for D‐band and 0.18 μm complementary metal oxide semiconductor (CMOS) process. The bandpass filter is composed of an inverted L‐shaped coupling microstrip line and a cross‐coupled resonator, and is coupled to produce two controlled transmission zeros. A defected ground structure is used to make a good impedance match. The designed filter has a 3 dB impedance bandwidth of 52 GHz (149–201 GHz) with a center frequency of 175 GHz and an insertion loss of 3.23 dB. The design of this paper is a CMOS 0.18 μm process capable of applying the D‐band bandpass filter with the advantages of lower insertion loss, broadband, and compact size.

Source: Microwave and Optical Technology Letters

DOI: 10.1002/mop.34313

Authors: Ming‐An Chung, Chia‐Wei Lin, Chih‐Wei Yang, Ing‐Peng Meiy

Institution: National Taipei University of Technology

Language: English

Topic: Microwave Engineering and Waveguides

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: National Science and Technology Council

Award: G4346718526