Work

Reduced Overshoots, Oscillations, and $dV/dt$ Generation in Parallel Connected SiC MOSFET Modules With Optional Active Current Balancing

Year: 2024

Type: article

Abstract: Silicon Carbidemosfets offer increased switching speeds, reduced filtering component sizes and lower switching losses when compared to Silicon IGBTs in power converters. However, available module current ratings, increased oscillatory switching behavior, large drain-source voltage overshoots, and high output voltage$dV/dt$levels are all limiting factors to their adoption in medium to high-power applications. The use of inter-device inductances with switching edge skewing has previously been demonstrated as a method of limiting current imbalances when paralleling modules. This article shows that by precisely controlling the timing skews applied between modules in such arrangements, substantial overshoot, oscillation, and output voltage$dV/dt$reductions can also be achieved. In addition, if current feedback is included, the module switching order can be varied to facilitate a fixed-skew active current balancing strategy. The mechanisms behind all of these effects are analyzed in detail, focusing on the impact of applied timing skew, and inter-device inductance on the improvements. An experimental investigation validating the current balancing, switching performance improvements, and reduced output voltage$dV/dt$is also presented using 400 A 1.2 kV half-bridge modules, with up to 4 modules in parallel at a total load current of 1600 A.

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3453438

Authors: Mason Parker, Sebastián Neira, Edward L. Horsley, Stephen Finney, Paul D. Judge

Institution: University of Edinburgh

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: green

Funder: Royal Society