Work

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad776d

Authors: Fan Yang, Ziye Gong, Fan Shi, Jintong Xu, Xiangyang Li

Institutions: Chinese Academy of Sciences, Shanghai Institute of Technical Physics, University of Chinese Academy of Sciences, University of Shanghai for Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G4254525232

OpenAlex ID: W4402210303

FWCI: 0.289

Cites: 47

Cited by: 2

Related to: 10