Work

A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate

Year: 2024

Type: article

Abstract: Bipolar degradation of the intrinsic bipolar body diode is one of the most important reliability problems associated with SiC MOSFET. In this paper, a voltage adjustable diode (VAD) integrated SiC trench MOSFET (VAD-TMOS) with barrier control gate (BCG) is proposed to overcome this issue. Compared to the intrinsic bipolar body diode of conventional SiC trench MOSFET (C-TMOS), VAD has 57% reduction of the on-state voltage drop. Furthermore, the reverse recovery charge (Qrr) of VAD-TMOS is only 1.21 μC/cm2, whereas the value of C-TMOS is 3.84 μC/cm2. The miller charge (Qgd) of VAD-TMOS is reduced by about 6 × in comparison with that of C-TMOS owing to the reduction of the overlap region of gate and drain terminal. The better third quadrant and fast switching capability make SiC VAD-TMOS a potential candidate as a next generation of power switch.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-hs3sd9

Authors: Song Jun Li, Xiao Chuan Deng, Xu Li, Xuan Li, Yi Wen

Institution: University of Electronic Science and Technology of China

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Natural Science Foundation of China, Natural Science Foundation of Sichuan Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2653603915, G4325823706, G4884862625