Work

Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

Year: 2024

Type: article

Abstract: In this work, we investigate the use of reflectance spectroscopy as an accurate, fast, and non-destructive method for measuring the thickness of transparent layers, such as SiO2, with thicknesses below 200 nm for microelectronic applications. To this end, we fabricated different oxides and analyzed their reflectance spectra using reflectance spectroscopy. The results were compared to theoretical reflectance spectra to validate the method. We introduce key factors to ensure accurate measurement by modeling the reflectance spectra of thin oxide layers with thicknesses ≥ 15 nm on 4H-SiC using the transfer matrix method (TMM).

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-lm74bm

Authors: Julien Koerfer, Mathias Rommel, Alesa Fuchs, Oleg Rusch

Institution: Fraunhofer Institute for Integrated Systems and Device Technology

Language: English

Topic: Optical Polarization and Ellipsometry

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4402214680

FWCI: 0.107

Cites: 13

Cited by: 1

Related to: 10