Work

Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0211768

Authors: Shivendra K. Rathaur, Abhisek Dixit, Edward Yi Chang

Institutions: National Yang Ming Chiao Tung University, Indian Institute of Technology Delhi

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Institute for Information Industry, Ministry of Science and Technology, Taiwan

Awards: G1002260812, G2524945452, G3704814667, G8586852323

OpenAlex ID: W4402236571

FWCI: 0.513

Cites: 37

Cited by: 5

Related to: 10