Work

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Year: 2024

Type: article

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/24020020

Authors: Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang

Institutions: Beijing University of Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402253703

FWCI: 0.308

Cites: 25

Cited by: 3

Related to: 10