Mono‐Exponential Current Attenuation with Distance Across 16 nm Thick Bacteriorhodopsin Multilayers
Year: 2024
Type: article
Abstract: The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length‐attenuation, as in off‐resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self‐assembled multilayers of the protein bacteriorhodopsin (bR). ≈7.5 to 15.5 nm thick bR layers are prepared on conductive titanium nitride (TiN) substrates using aminohexylphosphonic acid and poly‐diallyl‐dimethylammonium electrostatic linkers. Using conical eutectic gallium‐indium top contacts, an intriguing, mono‐exponential conductance attenuation as a function of the bR layer thickness with a small attenuation coefficient β ≈ 0.8 nm−1 is measured at zero bias. Variable‐temperature measurements using evaporated Ti/Au top contacts yield effective energy barriers of ≈100 meV from fitting the data to tunneling, hopping, and carrier cascade transport models. The observed temperature‐dependence is assigned to the protein‐electrode interfaces. The transport length and temperature dependence of the current densities are consistent with tunneling through the protein–protein, and protein‐electrode interfaces, respectively. Importantly, the results call for new theoretical approaches to find the microscopic mechanism behind the remarkably efficient, long‐range electron transport within bR.
Source: Advanced Functional Materials
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,510
Awards: G2391540838, Verbundprojekt: Forschungsfabrik Mikroelektronik Deutschland - Fraunhofer-Verbund Mikroelektronik in Kooperation mit den Leibniz-Instituten FBH und IHP - FMD -, Teilvorhaben: Prozessausrüstung für die Heterointegration von III-V Halbleitern auf Bi-CMOS, THz Anwendungen und Wide-Band-Gap Leistungselektronik, G3147567523, Verbundprojekt: Forschungsfabrik Mikroelektronik Deutschland - Fraunhofer-Verbund Mikroelektronik in Kooperation mit den Leibniz-Instituten FBH und IHP - FMD -, Teilvorhaben: Prozessausrüstung für 'More-than-Moore' Technologien in der FMD, Verbundprojekt: Forschungsfabrik Mikroelektronik Deutschland - Fraunhofer-Verbund Mikroelektronik in Kooperation mit den Leibniz-Instituten FBH und IHP - FMD -, Teilvorhaben der Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. in der Forschungsfabrik Mikroelektronik Deutschland, G7147993182, G7598541247
OpenAlex ID: W4402270018
