Work

The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0219265

Authors: Xuan Su, Ling Yang, Meng Zhang, Qing Zhu, Wenze Gao, Wei Zhao, Qian Yu, Qingyuan Chang, Hao Lu, Chunzhou Shi, Bin Hou, Mei Wu, Sheng Wu, Gang Qiu, Xiaohua Ma, Yue Hao

Institutions: Xidian University, ZTE (China)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, National Postdoctoral Program for Innovative Talents, Fundamental Research Funds for the Central Universities, Natural Science Basic Research Program of Shaanxi Province

Awards: G2408319543, G3372063648, G4142207067, G461459989, G4877702549, G5536712496, G5752182232, G6184712203, G6267237474, G6950084816, G704711181, G7185126207, G8018334240, G8322162897, G8873030284

OpenAlex ID: W4402273557

FWCI: 1.736

Cites: 29

Cited by: 12

Related to: 10