Work

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications

Year: 2024

Type: article

Abstract: Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. We discuss the recent research progress on controlling oxygen vacancy concentration in metal oxide thin films and its impact on their resistive switching properties for application in electronic memory and neuromorphic computing devices.

Source: Chips

DOI: 10.3390/chips3030012

Authors: Biswajit Jana, Ayan Roy Chaudhuri

Institution: Indian Institute of Technology Kharagpur

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,137

Funder: Science and Engineering Research Board