Work

Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond” [Jun 24 174-183]

Year: 2024

Type: erratum

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3429780

Authors: Tidjani Garba-Seybou, Xavier Federspiel, Joycelyn Hai, Cheikh Diouf, Florian Cacho, Alain Bravaix

Institutions: STMicroelectronics (France), Institut Supérieur de l'Électronique et du Numérique

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402300036

Cites: 1

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Related to: 10