Work

Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3455372

Authors: Jia Cheng Li, Ying Chen Li, Zi Chun Liu, Yuan Xiao Ma, Ye Liang Wang

Institutions: Beijing Institute of Technology, Nankai University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1793817562, G322848710, G3484261127, G5877006633, G6035117239

OpenAlex ID: W4402302016

FWCI: 1.145

Cites:

Cited by: 11

Related to: 10