A comprehensive study of gate-induced drain leakage current and electrical characteristics in nanosheet field-effect transistors due to variation in structural parameters and ambient temperature
Year: 2024
Type: article
Authors: Shubham, Shruti Bhosle, Rajan Kumar Pandey
Institution: Vellore Institute of Technology University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G5443067559
OpenAlex ID: W4402347453