Work

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability

Year: 2024

Type: article

Source: Chinese Journal of Electronics

DOI: 10.23919/cje.2022.00.394

Authors: Jinping Zhang, Qinglin Wu, Zixun Chen, Hua Zou, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: China Postdoctoral Science Foundation

Award: G4074591651

OpenAlex ID: W4402350273

FWCI: 1.948

Cites: 25

Cited by: 19

Related to: 10