Work

4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity

Year: 2024

Type: article

Abstract: In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching$960 \; \mu $A/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/$\sqrt {\text {Hz}}$is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3456752

Authors: Hesham Okeil, Gerhard Wachutka

Institution: Technical University of Munich

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,495

Funder: Technische Universität München