Work

Integration of Self-Assembled Monolayers for Cobalt/Porous Low-k Interconnects

Year: 2024

Type: article

Abstract: The integration of self-assembled monolayers (SAM) into cobalt (Co)/porous low-dielectric-constant (low-k) dielectric interconnects is studied in terms of electrical characteristics and reliability in this work. Experimental results indicated that SAM derived from 3-aminopropyltrimethoxysilane (APTMS) improved breakdown field, time-dependent dielectric breakdown, and adhesion for Co/porous low-k integrated interconnects. However, the improvement magnitude was not large as compared to SAM in the Cu/porous low-k integration. Therefore, the integration of SAM into Co/porous low-k interconnects has a positive effect; however, in order to further promote the efficiency of SAM for Co/porous low-k interconnects, the option of precursors for the growth of SAM is required.

Source: Coatings

DOI: 10.3390/coatings14091162

Authors: Yi-Lung Cheng, Joe Kao, Hao-Wei Zhang, Bo-Jie Liao, Giin-Shan Chen, Jau-Shiung Fang

Institutions: National Chi Nan University, Feng Chia University, National Formosa University

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,955

Funder: National Science Council