Work

Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0229345

Authors: Shaozhong Yue, Xuefeng Zheng, Fang Zhang, Danmei Lin, Sijie Bu, Yingzhe Wang, Peipei Hu, Jie Liu, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao

Institutions: Xidian University, Chinese Academy of Sciences, Institute of Modern Physics, Liverpool John Moores University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1715301751, G5080138891, G6167179484

OpenAlex ID: W4402369125

FWCI: 0.77

Cites: 28

Cited by: 10

Related to: 10