Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor
Year: 2024
Type: article
Abstract: An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field‐effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain‐source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics .
Source: Advanced Electronic Materials
Institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Laboratoire d'Analyse et d'Architecture des Systèmes, Institut National des Sciences Appliquées de Toulouse, Institut National Polytechnique de Toulouse, Laboratoire de Chimie de Coordination, Université de Toulouse, Ştefan cel Mare University of Suceava
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,100
OpenAlex ID: W4402381263