Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity

Year: 2024

Type: article

Abstract: Silicon vacancy (V Si ) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties, including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of V Si centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasize the importance of optimizing emitter–cavity interactions for efficient quantum photonic applications.

Source: Nano Letters

DOI: 10.1021/acs.nanolett.4c03233

Authors: Jae-Pil So, Jialun Luo, Jaehong Choi, Brendan McCullian, Gregory D. Fuchs

Institutions: Soongsil University, Cornell University

Language: English

Topic: Plasmonic and Surface Plasmon Research

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, National Research Foundation of Korea, Directorate for Mathematical and Physical Sciences, Cornell Center for Materials Research, Materials Research Science and Engineering Center, Harvard University, Office of Naval Research, Division of Materials Research, Division of Civil, Mechanical and Manufacturing Innovation, Air Force Office of Scientific Research

OpenAlex ID: W4402385065