Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process
Year: 2024
Type: article
Language: English
Subfield: Instrumentation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: European Science Foundation
Awards: G3306578842, G4180109945
OpenAlex ID: W4402401588
