Work

Modeling the dV CE /dt and dI C/dt at the Turn-On Transient for High-Voltage IGBTs in the Clamped Inductive Circuit

Year: 2024

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2024.3456834

Authors: Zhiyuan Zhang, Hengxin He, Kejie Li, Nianwen Xiang, Weijiang Chen

Institutions: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Hefei University of Technology, State Grid Corporation of China (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4402401802

FWCI: 0.103

Cites: 45

Cited by: 1

Related to: 10