Work

Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs

Year: 2024

Type: article

Abstract: In this article, it is proven that in the framework of carrier number fluctuation mechanism, the input referred voltage noise is equal to the flat-band voltage noise only if the access resistances give a negligible contribution to the total device resistance. The expression of the correlated carrier number and mobility fluctuations (CNF/CMF) noise is revisited, and compact analytical equations are proposed. It is demonstrated that if the degradation of the intrinsic mobility in strong inversion is not too significant, considering a constant intrinsic Coulomb scattering coefficient or a constant intrinsic effective Coulomb scattering coefficient leads to similar extracted noise parameters. It is also proven that a constant extrinsic effective Coulomb scattering coefficient is physically incorrect if the access resistances impact cannot be neglected in the total device resistance.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3445310

Authors: Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso, Eddy Simoen

Institutions: École Nationale Supérieure d'Ingénieurs de Caen, IMEC, Ghent University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4402402353

FWCI: 0.312

Cites: 31

Cited by: 3

Related to: 10