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High-Performance Photodetector from p-n Junction of Vertically Aligned SnS2 and Reduced Graphene Oxide

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Year: 2024
Type: article
Source: ACS Applied Electronic Materials
DOI: 10.1021/acsaelm.4c01311
Authors: Chayan Das, Suresh Kumar, Neha V. Dambhare, Mahesh Kumar, Arup K. Rath, Satyajit Sahu
Institutions: Indian Institute of Technology Jodhpur, National Chemical Laboratory, Council of Scientific and Industrial Research, Academy of Scientific and Innovative Research
Language: English

Topic: 2D Materials and Applications
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India
Award: G831301962
OpenAlex ID: W4402404013
FWCI: 0.57
Cites: 44
Cited by: 6
Related to: 10
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