Gallium nitride-based resonant tunneling diode oscillators
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0225312
Authors: Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa
Institution: Sony Semiconductor Solutions Corporation (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402411516